www. cn ele c tr .com MBR10150CT 1 0 a m p high voltage features high junction temperature capability good trade off between leakage current and forward volage drop low leakage current catalog number maximum r e current peak reverse voltage maximum rms voltage maximum dc blocking voltage m b r 10 15 0 ct 15 0 v 105v 150 v electrical characteristics @ 2 5 c unless otherwise specified average forward current i f(av) 10 a t c = 1 5 5 c peak forward surge current i fsm 1 20 a 8.3 ms half si ne maximum instantaneous forward voltage m b r 1 0 1 5 0 ct v f . 9 2 v * pulse test: pulse width38 0 m sec, duty cycle 2 % i fm = 5a t j = 2 5 c pin 1 pin 3 pin 2 case 150volts maximum ratings operating j u n c ti o n temperature : 1 50 c storage temperature: - 50 c to + 1 50 c p er d i o de thermal resistance 4c/w junction to case total thermal resistance 2.4c/w junction to case barrier rectifier power schottky maximum reverse current at rated dc blocking voltage i r 50 m a t j = 25 c 7m a t j = 125 c v f .75v i fm = 5a t j = 125 c shanghai lunsure electronic technology co.,ltd tel:0086-21-37185008 fax:0086-21-57152769 inches mm
a .560 .625 14 . 22 15 . 88 b .380 . 420 9. 6 5 10 . 67 c .100 .135 2.54 3.43 d .230 .270 5.84 6.86 e .380 .420 9.65 10.67 f ------ .250 ------ 6.35 g .500 .580 12.70 14.73 h .090 .110 2.29 2.79 i .020 .045 0.51 1.14 j .012 .025 0.30 0.64 k .139 .161 3.53 4.09 l .140 .190 3.56 4.83 m .045 .055 1.14 1.40 n .080 .115 2.03 2.92 a b c k j i h g f e d n m l h to-220 ab p i n
ww w . cn el ec tr .com m br10150ct 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 if(av) (a) pf(av)(w) d = 0.05 d = 0.1 d = 0.2 d = 0.5 d = 1 t d =tp/t tp fig. 1: average forward power dissipation versus average forward current (per diode). 0 2 5 5 0 7 5 100 125 150 175 0 1 2 3 4 5 6 tamb(c) if(av)(a) rth(j-a)=rth(j-c) rth(j-a)=15c/w t d =tp/t tp fig. 2: average forward current versus ambient temperature ( d = 0.5, per diode). 1e-3 1e-2 1e-1 1e+0 0 10 20 30 40 50 60 70 80 t(s) im(a) tc=50c tc=75c tc=125c i m t d =0.5 fig. 3: non repetitive surge peak forward current versus overload duration (maximum values, per diode). 1e-3 1e-2 1e-1 1e+0 0.0 0.2 0.4 0.6 0.8 1.0 tp(s) zth(j-c)/rth(j-c) d = 0.5 d = 0.2 d = 0.1 single pulse t d =tp/t tp fig. 4: relative variation of thermal impedance junction to case versus pulse duration (per diode). 0 2 5 50 75 100 125 150 1e-2 1e-1 1e+0 1e+1 1e+2 1e+3 1e+4 1e+5 vr(v) ir(a) tj=75c tj=25c tj=125c tj=150c tj=175c fig. 5: reverse leakage current versus reverse voltage applied (typical values, per diode) 1 2 5 10 20 50 100 200 10 20 50 100 200 vr(v) c(pf) f=1mhz tj=25c fig. 6: junction capacitance versus reverse voltage applied (typical values, per diode).
ww w . cn ele c tr .com m br10150ct 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1.0 10.0 100.0 vfm(v) ifm(a) tj=125c tj=25c tj=125c typical values fig. 7: forward voltage drop versus forward current (maximum values, per diode). 0 2 4 6 8 101214161820 0 10 20 30 40 50 60 70 80 s(cm2) rth(j-a) (c/w) fig. 8: thermal resistance junction to ambient versus copper surface under tab (epoxy printed circuit board, copper thickness: 35m) (stps10150cg only).
marking 1 . m ar k ing on t he s e m i c ondu c t or ( l a s er ma r ki ng o r u v i n k ma r ki ng ) logo type name te r m i n a l s i g n mbr 101 50 ct ww w . cn ele c tr .com
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